The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
May. 02, 1990
Applicant:
Inventors:
Kazuhiro Mochizuki, Kodaira, JP;
Tomonori Tanoue, Ebina, JP;
Chushirou Kusano, Tokorozawa, JP;
Hiroshi Masuda, Hachioji, JP;
Katsuhiko Mitani, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 90 ; 148D / ; 148D / ; 148D / ; 357 34 ; 357 55 ; 437 31 ; 437 40 ; 437126 ; 437945 ;
Abstract
A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.