The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 1991

Filed:

Aug. 08, 1989
Applicant:
Inventors:

Hajime Hitotsuyanagi, Itami, JP;

Nobuhiko Fujita, Itami, JP;

Hideo Itozaki, Itami, JP;

Syoji Nakagama, Itami, JP;

Saburo Tanaka, Itami, JP;

Kazuhiko Fukushima, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G / ; B05D / ;
U.S. Cl.
CPC ...
430128 ; 430 85 ; 136258 ; 136261 ; 357-2 ; 357 30 ; 357 31 ; 427 531 ; 427 541 ; 313384 ;
Abstract

The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used. Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided. In addition, various kinds of articles such as a solar cell having superior long wave length-sensitivity in which said element is used in a carrier-producing layer, an electrophotographic sensitive member containing said element in a carrier-producing layer, and an image sensor, in which said element is used in a carrier-producing layer, having superior long wave length-sensitivity, can be provided.


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