The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1991
Filed:
Nov. 06, 1989
Haruhisa Takiguchi, Nara, JP;
Hiroaki Kudo, Tenri, JP;
Chitose Sakane, Nara, JP;
Satoshi Sugahara, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device is disclosed which comprises an active layer positioned between a first cladding layer and a second cladding layer, the active layer being made of a compound semiconductor material selected from the group consisting of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.0.7), Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.0.4), and Ga.sub.x In.sub.1-x P.sub.1-y As.sub.y (0.5.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and y=2x-1), wherein an optical guiding layer having a diffraction grating made of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.1) is positioned between the active layer and one of the cladding layers.