The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1991
Filed:
Jun. 29, 1988
Masayasu Nihei, Hitachi, JP;
Jin Onuki, Hitachi, JP;
Yasushi Koubuchi, Hitachi, JP;
Kunio Miyazaki, Hitachi, JP;
Tatsuo Itagaki, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hold stable discharge and reverse sputter at a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. A film whose peak value of x-ray diffraction strength in the (111) plane is 150 Xcps or more is possible. Also, a barrier layer with a layered structure of granular and columnar crystals or a mixed structure thereof and hence with an efficient barrier effect and a large specific resistance is possible.