Electron beam exposure evaluation method

Abstract

In formation of a fine pattern with direct electron beam delineation, disclosed is a method of obtaining parameters on an electron scattering intensity distribution expressed with a double Gaussian distribution obtained when exposing a resist with an electron beam. A resist on a substrate is exposed with an electron beam in accordance with an evaluation pattern which comprises a plurality of basic checked patterns each comprising longitudinal and lateral exposed stripes. The basic checked patterns are successively arranged longitudinally and laterally at predetermined intervals on a plane so as to form a plurality of longitudinal pattern rows and lateral pattern rows, widths of the stripes of the basic checked patterns in each of the lateral pattern rows being successively changed so as to be different from each other. The exposure doses for the basic checked patterns in each of the longitudinal pattern rows are successively changed so as to be different at every basic checked pattern, thereby obtaining, as a critical exposure dose, the minimum exposure dose in each of the longitudinal pattern rows on the basis of removed or remaining states of the non-exposed portions of the basic checked patterns to obtain the respective parameters.