The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Dec. 02, 1988
Applicant:
Inventors:
Hsueh-Rong Chang, Scotia, NY (US);
Bantval J Baliga, Raleigh, NC (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 2314 ; 357 34 ; 357 36 ; 357 37 ; 357 43 ; 357 52 ; 357 55 ; 357 68 ; 357 86 ; 357 42 ;
Abstract
A UMOS IGBT has a source electrode ohmic contact area which is at least 40% base region and preferably at least 50% base region in order to provide a high latching current and a large safe operating area.