The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1991
Filed:
Jun. 05, 1989
Toshihiko Hirose, Hyogo, JP;
Tomohisa Wada, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a semiconductor integrated circuit device, an output MOSFET circuit includes a first N-type MOSFET and a first P-type MOSFET. The output circuit is controlled by two different control signals having two different levels to provide a signal at an output terminal at a junction between the two MOSFETs. An intermediate potential setting circuit includes a second N-type MOSFET and a second P-type MOSFET, and is followed by the output MOSFET circuit. The intermediate potential setting circuit sets the potential of the output terminal to an intermediate potential in accordance with an intermediate potential setting signal applied to the intermediate potential setting circuit prior to variation of the output. With this structure comsumption is reduced and high speed operation is made possible.