The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1991
Filed:
Dec. 04, 1989
Applicant:
Inventors:
Bich-Yen Nguyen, Austin, TX (US);
Jen-Jiang Lee, Plano, TX (US);
Hoang K Nguyen, Austin, TX (US);
Young Limb, Austin, TX (US);
Philip J Tobin, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; C23C / ;
U.S. Cl.
CPC ...
437238 ; 437 18 ; 437225 ; 437228 ; 437235 ; 437 38 ; 437 39 ; 118 501 ; 118620 ;
Abstract
A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.