The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Jul. 08, 1988
Applicant:
Inventors:
Kazuhiko Sagara, Hachioji, JP;
Tokuo Kure, Kokubunji, JP;
Eiichi Murakami, Fuchu, JP;
Tohru Nakamura, Tanashi, JP;
Masanobu Miyao, Tokorozawa, JP;
Masao Kondo, Hachioji, JP;
Akitoshi Ishizaka, Kokubunji, JP;
Yoichi Tamaki, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 59 ; 357 49 ; 357 55 ; 01L / ; 01L / ;
Abstract
Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.