The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Sep. 01, 1989
Yasuhisa Sato, Isehara, JP;
Takushi Motoyama, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device on a substrate, depositing an insulator layer on the substrate so as to bury the semiconductor device, providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device, filling the contact hole by a refractory metal for electrical connection, covering the insulator layer by a second insulator layer, forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove, forming a material layer acting as nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.