The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Feb. 23, 1990
Applicant:
Inventors:
Alain S Harrus, Philadelphia, PA (US);
Graham W Hills, Salisbury, PA (US);
Cris W Lawrence, Allentown, PA (US);
Morgan J Thoma, Macungie, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 12 ; 437 62 ; 437190 ;
Abstract
In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e.g., reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e.g., 10-15 nm of an 800 nm layer, promptly after performing the step which produced the source of contamination.