The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 1990

Filed:

Nov. 13, 1989
Applicant:
Inventors:

Ernest Bassous, Bronx, NY (US);

Joseph M Blum, Yorktown Heights, NY (US);

Kevin K Chan, Staten Island, NY (US);

Angela C Lamberti, Putnam Valley, NY (US);

Constantino Lapadula, Mahopac, NY (US);

Istvan Lovas, Mahopac, NY (US);

Alan D Wilson, Armonk, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156645 ; 156628 ; 156647 ; 156651 ; 156653 ; 156657 ; 1566591 ; 156662 ;
Abstract

The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming an apertured mask on the silicon body, and removal of an unwanted silicon region by mechanical grinding and chemical etching to provide a well opening in the silicon body terminating in the doped membrane.


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