The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1990
Filed:
Dec. 04, 1989
Yumiko Iyama, Yokohama, JP;
Junichi Miyamoto, Yokohama, JP;
Nobuaki Ohtsuka, Yokohama, JP;
Sumio Tanaka, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory device includes a memory cell transistor, a voltage switching circuit supplied with a first voltage for data readout and a second voltage for data write and selectively generating one of the first and second voltages in response to a write control signal, a first driving circuit supplied with an output from the voltage switching circuit and driving the gate of the memory cell transistor in response to a memory cell selection signal, a sense circuit for sensing data of the memory cell transistor by comparing a sense potential corresponding to data from the memory cell transistor with a reference potential, a reference cell transistor for generating the reference potential, and a second driving circuit supplied with the output from the voltage switching circuit and driving the gate of the reference cell transistor in response to the write control signal.