The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 1990
Filed:
Aug. 08, 1989
William L Ahlgren, Goleta, CA (US);
Eric F Schulte, Santa Barbara, CA (US);
Santa Barbara Research Center, Goleta, CA (US);
Abstract
A method and apparatus for detecting infrared radiation is disclosed. The apparatus comprises a substrate (12) having readout and signal processing circuits (14) integrated therein. The substrate (12) is formed from a material selected from the group consisting of silicon, gallium arsenide, or germanium. A first semiconductor layer (28) is grown on the substrate (12) from a material selected from the group consisting of mercury-cadmium-telluride, mercury-zinc-telluride, mercury-cadmium-selenide, mercury-zinc-selenide, mercury-cadmium-sulfide, mercury-zinc-sulfide, lead-tin-telluride, lead-tin-selenide, lead-tin-sulfide, indium-arsenide-antimonide, gallium-indium-antimonide, or gallium-antimonide-arsenide. A second semiconductor layer (30) is then grown on the first semiconductor layer (28).