The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 1990
Filed:
Mar. 14, 1988
Applicant:
Inventors:
Adrian I Cogan, San Jose, CA (US);
Neill R Thornton, Alameda, CA (US);
Assignee:
Siliconix incorporated, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 55 ; 437203 ;
Abstract
A trench power MOSFET device is disclosed wherein the method of manufacturing produces a high density MOSFET cell with good breakdown characteristics.