The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 1990
Filed:
Apr. 25, 1989
Fumitake Mieno, Kawasaki, JP;
Kazuyuki Kurita, Yokohama, JP;
Shinji Nakamura, Yokohama, JP;
Atuo Shimizu, Kawasaki, JP;
Fujitsu Limited, Kawasaki, US;
Abstract
A method for simultaneously forming an epitaxial silicon layer on a surface of a silicon substrate, and a polysilicon layer on a silicon dioxide (SiO.sub.2) layer which is formed on the silicon substrate using a low pressure silicon vapor deposition method, employing silicon hydride gas, particularly disilane (Si.sub.2 O.sub.6), as a silicon source gas. A crystal growing temperature ranging from 780.degree. C. to 950.degree. C. and a reaction gas pressure ranging from 20 Torr to 300 Torr are desirable. An extended silicon epitaxial region is achieved under a higher temperature and a higher gas pressure, and with a substrate of a (100) orientation. A polysilicon layer having an even surface and joining smoothly to an epitaxial silicon layer which is simultaneously formed, is obtained under a lower temperature and a lower gas pressure, and with a substrate of a (111) orientation.