The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1990
Filed:
Sep. 12, 1989
Shuen-Chin Chang, San Jose, CA (US);
Samsung Semiconductor, San Jose, CA (US);
Abstract
The present invention implements a static inverter-type TTL/CMOS level translator. The present invention utilizes a pair of transistors to suppress hot electron effects. The transistor pair limits maximum VDS to VCC-VTN at the first and second gain stages. A pair of resistors serve as a virtual VCC modulator to minimize voltage variations, stabilizing the VIL/VIH trip point. The resistors also minimize standby current so that the translator of the present invention can be used in a low standby current environment. The translator of the present invention provides faster speed, wider process margins, better reliability and lower standby current than prior art translators.