The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Jun. 08, 1988
William J Gallagher, Ardsley, NY (US);
Edward A Giess, Purdys, NY (US);
Aranava Gupta, Valley Cottage, NY (US);
Robert B Laibowitz, Peekskill, NY (US);
Eugene J O'Sullivan, Peekskill, NY (US);
Robert L Sandstrom, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.