The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1990
Filed:
Jun. 20, 1988
Bantval J Baliga, Schenectady, NY (US);
Hsueh-Rong Chang, Scotia, NY (US);
Edward K Howell, Simsbury, CT (US);
General Electric Company, Schenectady, NY (US);
Abstract
An insulated field effect semiconductor device having source and drain regions extending to opposed surfaces of its semiconductor body is bidirectional and capable of blocking voltages in either of two opposing polarities and comprises a four terminal device having source and drain electrodes disposed on the opposed surfaces and a base electrode all ohmically connected to corresponding portions of the semiconductor body. An insulated gate is provided in a trench which extends into the semiconductor body for controlling the conductivity of a channel region extending within the base region between the source and drain regions. The device is free of source-to-base and drain-to-base short circuits. Control circuits enable this device to conduct or block both polarities of a high current AC voltage applied across its source and drain terminals while preventing undesired avalanche breakdown within the device.