The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1990
Filed:
Oct. 24, 1989
Tatsuo Okamoto, Itami, JP;
Akihiko Ohsaki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor layer correspondence to a contact hole. Therefore, even if a pit generated at a junction part between the second semiconductor layer and a conductive layer in the contact hole grows, the growth of the pit is inhibited by the insulating layer, whereby leakage current caused between the first and second semiconductor layers can be reduced, a reliability of the device being thus enhanced.