The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1990
Filed:
Nov. 21, 1988
Simon M Tam, Redwood City, CA (US);
Stefan K Lai, Belmont, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Improved processing which permits the simultaneous fabrication of block erasable flash EPROM cells and individually erasable EEPROM cells. A polysilicon finger extends from the floating gate of the EEPROM cell over a tunnel oxide region. Doped regions are formed under this finger by implanting dopants in alignment with the finger during the implantation of the source and drain regions for the cells and then driving the dopant under the finger. The arsenic dopant used to form the source and drain regions for the cells is used to form the doped regions along with the phosphorus dopant used for the source region of the flash EPROM cells.