The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1990
Filed:
Sep. 28, 1988
Applicant:
Inventors:
Peter Hahn, Burghausen, DE;
Hubert Piontek, Burgkirchen, DE;
Anton Schnegg, Burghausen, DE;
Werner Zulehner, Burghausen, DE;
Assignee:
Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH, Burghausen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 332 ; 148 333 ; 437 12 ; 437228 ; 437239 ;
Abstract
Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.