Detector device for measuring the intensity of electromagnetic radiation

Abstract

An interferometer comprises an optical system for generating an interference pattern of a predetermined configuration in a focal plane of the interferometer, and a detector device for measuring the distribution of optical power over the focal plane. The detector device comprises a body of semiconductor material having first and second opposite main surfaces, one of which surfaces lies substantially in the focal plane of the interferometer. The body of semiconductor material has a region of a first conductivity type and a channel of a second, opposite conductivity type at the first surface thereof and bounded by the region of the first conductivity type. The configuration of the channel conforms substantially to the predetermined configuration of the interference pattern. The semiconductor material responds to electromagnetic radiation in a given spectral region by generating charge carriers. Charge carriers that are created in or diffuse into the channel are confined in the channel. A layer of dielectric material is formed on the first surface of the body of semiconductor material and overlies the channel. A layer of resistive material is disposed over the layer of dielectric material, the layer having two terminal regions such that when opposite terminals of a DC potential source are connected to those terminal regions, an electric field that extends longitudinally of the channel is created, so that charge carriers are transported along the channel to an end region thereof. An output device has a charge collection region adjacent to the end region of the channel.