The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
Jun. 01, 1988
Yoshinobu Nakagome, Albany, CA (US);
Masakazu Aoki, Tokorozawa, JP;
Masashi Horiguchi, Kokubunji, JP;
Kiyoo Itoh, Higashikurume, JP;
Shinichi Ikenaga, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A highly integrated memory features increased reading speed and writing speed. A sense circuit for this memory including a memory cell array having a plurality of memory cells each of which including at least one insulated gate field effect transistor, and a plurality of data lines to which the memory cells are connected. The memory also includes an address selection mechanism which is capable of selecting a memory cell out of a plurality of memory cells and connecting it to the data line. A sense amplifier a mechanism which is connected to the data line and amplifies a voltage according to the data of a memory cell. A common line (input/output line) is connected to the data lines, via a column switch, where the selection depends upon a column address. A main amplifier is connected to the common line (input/output line), and has at least a mechanism for stabilizing the voltage of the common line (input/output line) and an amplifying mechanism.