The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 1990
Filed:
Dec. 16, 1988
Applicant:
Inventor:
Duane E Carter, Plano, TX (US);
Assignee:
Texas Instruments, Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 52 ; 437203 ; 437228 ; 437229 ;
Abstract
A void (60) is created in a semiconductor substrate (52) by forming a cavity which is subsequently filled with an organic polymer (66). The organic polymer is masked and etched to form a spacer. A dielectric (70) fills the portions of the cavity where the organic polymer was etched away. The organic polymer is subsequently etched leaving a void.