The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 1990
Filed:
Jan. 13, 1989
Kenji Kobayashi, Kobe, JP;
Masataka Kondo, Kobe, JP;
Kazunori Tsuge, Kobe, JP;
Yoshihisa Tawada, Kobe, JP;
Kanegafuchi Kagaku Kogyo Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device comprising an amorphous semiconductor which might contain microcrystal therein, and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component; wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added, as an additional component of the metal electrode, to the first component. According the present invention, there can be prevented the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. Thereby, the degradation of properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and the lifetime of products can be greatly lengthened.