The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Aug. 03, 1989
Applicant:
Inventor:
Rod C Langley, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437228 ; 437225 ; 437235 ; 437981 ; 148D / ; 148D / ; 156643 ; 156644 ; 156646 ;
Abstract
The present invention is a contact etch method which simultaneously smoothes a reflowed oxide profile so that separate phanarization photoresist coat and etch steps are unnecessary. This method is characterized in that it is fast, uses only one photoresist mask layer, etches contacts to poly and to substrate simultaneously, is done entirely with plasma etch technology in a single reactor, and builds up less polymer in the plasma reactor. The novel method eliminates a coat and an etch step, improving yield and reducing fabrication time. Lower polymer buildup means higher yields due to a cleaner process, and less downtime for reactor chamber cleaning.