The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Sep. 06, 1988
Applicant:
Inventors:
Robert D Black, Clifton Park, NY (US);
Stephen D Arthur, Scotia, NY (US);
Robert S Gilmore, Burnt Hills, NY (US);
Homer H Glascock, II, Scotia, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 62 ; 148D / ; 437225 ; 228231 ; 228234 ;
Abstract
Wafers which are direct bonded to each other in accordance with prior art processes suffer from voids at their bonded interface. Annealing such composite structures at high temperature and high pressure (for silicon wafers preferably about 1,100.degree. C. and 15,000 psi) eliminates all voids which are not a result of the presence of a particle on one of the wafers at the time of mating.
Black, Robert. (1990). Method of making direct bonded wafers having a void free interface (U.S. Patent No. 4939101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4939101
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile