The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 1990
Filed:
Jul. 08, 1988
Hiroshi Yamaguchi, Fujisawa, JP;
Keiya Saito, Yokohama, JP;
Mitsuyoshi Koizumi, Yokohama, JP;
Akira Shimase, Yokohama, JP;
Satoshi Haraichi, Yokohama, JP;
Tateoki Miyauchi, Yokohama, JP;
Shinji Kuniyoshi, Tokyo, JP;
Susumu Aiuchi, Yokohama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.