The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 1990

Filed:

Jun. 24, 1988
Applicant:
Inventors:

Takeo Maeda, Kawasaki, JP;

Koji Makita, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 45 ; 437 46 ; 437 47 ; 437 49 ; 437 50 ; 437 59 ; 437 60 ; 357 43 ;
Abstract

A method for manufacturing MOS and bipolar transistors is proposed which includes MOS and bipolar transistors. The method comprises implanting impurity ions in a channel formation region with a dummy gate insulating film interposed and, subsequent to forming a gate oxide film on the surface of the resultant structure, impurity ions are implanted into an internal base region of the bipolar transistor.


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