The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1990
Filed:
Feb. 06, 1989
Applicant:
Inventors:
Hiroyuki Kamijo, Yokohama, JP;
Yuuichi Mikata, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 12 ; 437 24 ; 437 26 ; 437 29 ; 437 47 ;
Abstract
A method for manufacturing a semiconductor device is disclosed which selectively forms in a one-conductivity type semiconductor device a deep impurity-diffused area at over 1100.degree. C. in an H.sub.2 gas atmosphere containing N.sub.2, Ar, Ne, He and a combination thereof.