The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1990
Filed:
Mar. 25, 1988
Shigehira Iida, Ueno, JP;
Takayoshi Arai, Ueno, JP;
Junichiro Hashizume, Ueno, JP;
Tetsuya Takei, Ueno, JP;
Keishi Saitoh, Nabari, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO.sub.2, CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component .alpha.-alumina. In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.