The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 1990

Filed:

Oct. 02, 1989
Applicant:
Inventors:

Scott S Roth, Austin, TX (US);

Bich-Yen Nguyen, Austin, TX (US);

Philip J Tobin, Austin, TX (US);

Wayne Ray, Austin, TX (US);

E Petyr Wachholz, Cedar Park, TX (US);

Glenn Wissen, Elgin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437 72 ;
Abstract

An improved LOCOS isolation process is disclosed wherein an oxidizable layer is conformably dieposited to overlie a silicon nitride oxidation mask. In accordance with one embodiment of the invention, a composite layer comprising a buffer layer and an oxidation resistant material is patterned to form an oxidation mask on a silicon substrate. A layer of an oxidizable material is conformably deposited to overlie the oxidation mask. During the oxidation process used to form electrical isolation structures in the substrate, a substantial reduction in lateral oxidation encroachment is realized.


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