The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 1990

Filed:

Jul. 28, 1989
Applicant:
Inventors:

Ravinder K Sharma, Mesa, AZ (US);

Harry J Geyer, Phoenix, AZ (US);

Douglas G Mitchell, Tempe, AZ (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; C25D / ;
U.S. Cl.
CPC ...
204 345 ; 204 384 ; 20419225 ; 2041923 ; 357 71 ; 428620 ; 437192 ;
Abstract

A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.


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