The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 1990

Filed:

Oct. 13, 1987
Applicant:
Inventors:

Yoichi Tamaki, Kokubunji-shi, Tokyo, JP;

Tokuo Kure, Kokubunji-shi, Tokyo, JP;

Tohru Nakamura, Tanashi-shi, Tokyo, JP;

Tetsuya Hayashida, Nishitama-gun, Tokyo, JP;

Kiyoji Ikeda, Hachioji-shi, Tokyo, JP;

Katsuyoshi Washio, Tokorozawa-shi, Saitama, JP;

Takahiro Onai, Hachioji-shi, Tokyo, JP;

Akihisa Uchida, Wakaba-cho, Tachikawa-shi, Tokyo, JP;

Kunihiko Watanabe, Hamuracho, Nishitama-gun, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 68 ; 357 34 ; 357 49 ; 357 55 ; 357 71 ;
Abstract

A semiconductor device is disclosed, which includes bipolar transistor each having an emitter, base and collector formed inside each protruding portion of a semiconductor substrate, and trenches for device isolation. The bipolar transistor and the trench are spaced apart from each other by a predetermined spacing. According to this arrangement, the width of a base contact becomes uniform and any change of transistor characteristics can be prevented effectively.


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