The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1990
Filed:
Jul. 10, 1989
Applicant:
Inventors:
Hideo Yamagishi, Hyogo, JP;
Minori Yamaguchi, Hyogo, JP;
Keizo Asaoka, Hyogo, JP;
Akihiko Hiroe, Hyogo, JP;
Masataka Kondo, Hyogo, JP;
Kazunori Tsuge, Hyogo, JP;
Yoshihisa Tawada, Hyogo, JP;
Assignee:
Kanegafuchi Kagaku Kogyo Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 90 ; 357 58 ; 357-2 ; 357 63 ; 136249 ;
Abstract
A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.