The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1990
Filed:
Oct. 28, 1988
Blasius Brezoczky, San Jose, CA (US);
Jerome J Cuomo, Lincolndale, NY (US);
C Richard Guarnieri, Somers, NY (US);
Kumbakonam V Ramanathan, Troy, NY (US);
Srinvasrao A Shivashankar, Mt. Kisco, NY (US);
David A Smith, Katonah, NY (US);
Dennis S Yee, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrO.sub.x film forming layer. The process is carried out at approximately room temperature. The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown film to about 500.degree. C. The rapid thermal anneal step preferably comprises a series of at least five separte pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.