The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1990
Filed:
Jun. 15, 1989
Applicant:
Inventor:
Ferruccio Frisina, Catania, IT;
Assignee:
SGS Microelettronica S.p.A., Catania, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 31 ; 437 45 ; 437 59 ; 437904 ; 357 2313 ; 357 43 ;
Abstract
A MOS power structure made up of at least one MOS cell with gate electrode, drain electrode, source electrode, well-region and of a bi-polar parasitic transistor provided with a protective device for the gate and drain against overvoltages. The protective device consists of a further bi-polar transistor with optional addition of a zener diode.