The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 1990

Filed:

Jul. 12, 1988
Applicant:
Inventor:

Hidetsugu Uchida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365185 ; 365104 ; 357 235 ;
Abstract

A non-volatile semiconductor memory device includes a semiconductor substrate, and a source and a drain of a MOS transistor formed on one surface of the semiconductor substrate and spaced about from each other. First, second and third gates are formed on one side of the substrate through an insulating film and between the source and the drain of the MOS transistor. This memory device has one transistor construction and can be fabricated simply and finely.


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