The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1990
Filed:
Jul. 21, 1989
Paulus A van der Plas, Eindhoven, NL;
Wilhelmina C Snels, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device, in which a surface (1) of a silicon wafer (2) is locally provided with an oxidation mask (3), whereupon the wafer is subjected to an oxidation treatment by heating it in an oxidizing gas mixture. According to the invention, the wafer is heated during the treatment in the oxidizing gas mixture to a temperature of 950.degree. to 1050.degree. C. Water is then added to the oxidizing gas mixture. The quantity of added water is initially less than 30% by volume and later larger. Thus, in a comparatively short time a comparatively thick layer of oxide can be formed without defects being formed in silicon lying under the oxide.