The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1990
Filed:
Aug. 01, 1988
Applicant:
Inventors:
Assignee:
Shin-Etsu Handotai Company Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 58 ; 357 60 ; 357 61 ; 357 90 ;
Abstract
In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer of mixed crystal Ga.sub.1-z Al.sub.z AS, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.