The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1990
Filed:
Aug. 23, 1988
Takayuki Ohba, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of selectively forming (growing or depositing) a silicon-containing metal layer on an exposed surface of a semiconductor substrate or a conductor by using a metal halide gas and a silicon hydride gas at a ratio of a flow rate of the latter gas to that of the former gas (e.g., Si.sub.n H.sub.2n+2 /WF.sub.6) of 2 or less, and setting a growth temperature at 200.degree. C. or less. When a Si.sub.3 H.sub.8 gas and a WF.sub.6 gas, in particular, are used at a ratio of the flow rates (Si.sub.3 H.sub.8 /WF.sub.6) of 1.0 or less, and the deposition temperature is set at 100.degree. C. to room temperature, a silicon-containing tungsten layer is selectively deposited (formed).