The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
Mar. 10, 1988
Takayoshi Arai, Ueno, JP;
Shigehira Iida, Ueno, JP;
Junichiro Hashizume, Ueno, JP;
Tetsuya Takei, Ueno, JP;
Keishi Saitoh, Nabari, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An improvement in the known MW-PCVD process for forming a deposited film on each of a plurality of cylindrical substrates being so arranged as to surround the discharging space in a substantially enclosed reaction space of a deposition chamber by the glow discharge of raw material gas to generate plasmas containing reactive gaseous materials causing the formation of said deposited film in the discharging space while rotating said plurality of substrates, which comprises providing a gas feed pipe provided with a plurality of gas liberation holes opening into the discharging space in every space between every two of the substrates so as to form an encircled discharging space and an open non-discharging space by said plurality of cylindrical substrates and a plurality of gas feed pipes and regulating the deposit thickness to be deposited per a rotation cycle of the substrate passing through the discharging space and the non-discharging space to a 1000 .ANG. or less.