The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1990
Filed:
May. 25, 1988
Takayoshi Arai, Ueno, JP;
Shigehira Iida, Ueno, JP;
Keishi Saitoh, Nabari, JP;
Junichiro Hashizume, Ueno, JP;
Tetsuya Takei, Nagahama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant. Because of this, it becomes possible to repeatedly and stably prepare a desired deposited film excelling in the uniformity of the thickness and that of the quality at a high deposition rate.