The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1990
Filed:
Dec. 15, 1988
Yoshihiko Saito, Yokosuka, JP;
Yoshiaki Matsushita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A process for forming a vapor-phase epitaxial growth layer on a silicon wafer having a buried layer of a high As or B concentration. This vapor-phase epitaxial growth process is performed in two steps of (i) performing a vapor-phase epitaxial growth at a relatively low temperature by using a reaction gas containing at least one kind selected from a group consisting of SiH.sub.x F.sub.4-x (x=0 to 3) and Si.sub.2 H.sub.x F.sub.6-x (x=0-5) and at least one kind selected from a group consisting of SiH.sub.4 and Si.sub.2 H.sub.6, and (ii) performing a vapor-phase epitaxial growth under a condition which allows a higher growth rate that in the step (i) by using a reaction gas containing SiH.sub.4 or Si.sub.2 H.sub.6 which may or may not be accompanied with silane fluoride.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile