The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1990
Filed:
Mar. 14, 1989
Genichi Hatakoshi, Yokohama, JP;
Kazuhiko Itaya, Tokyo, JP;
Shigeya Naritsuka, Yokohama, JP;
Masayuki Ishikawa, Nishimine, JP;
Hajime Okuda, Yokohama, JP;
Hideo Shiozawa, Yokohama, JP;
Yukio Watanabe, Yokohama, JP;
Yasuo Ohba, Yokohama, JP;
Yoshihiro Kokubun, Yokohama, JP;
Yutaka Uematsu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities: