The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1990
Filed:
Feb. 21, 1989
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 43 ; 357 234 ; 357 38 ; 357 67 ; 357 71 ; 357 86 ;
Abstract
A field effect controllable bipolar transistor or isolated gate bipolar transistor (IGBT) has a drastically reduced inhibit delay charge, given identical on-state behavior, in that the anode zone has a thickness of less that 1 micrometer, it is doped with implanted ions with a dose of about 1.times.10.sup.12 through 1.times.10.sup.15 cm.sup.-2, and in that the life time of the minority charge carriers in the inner zone amounts to at least 1 microsecond.