The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 1990
Filed:
Dec. 16, 1988
Robin W Cheung, Cupertino, CA (US);
Bernard W Ho, Fremont, CA (US);
Hsiang-Wen Chen, Cupertino, CA (US);
Hugo W Chan, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A three-layer metal contact including aluminum is provided for silicon-based semiconductor devices to minimize the effects of formation of silicon precipitates in the aluminum layer and low contact junction leakage. The metal contact comprises a first layer of a refractory metal silicide formed on a silicon surface, an intermediate layer of aluminum formed on the refractory metal silicide and a top layer of a refractory metal silicide formed on the layer of aluminum. Where contact is made to polysilicon layers forming high resistance load resistors, the metal contact of the invention prevents reduction in resistance resulting from the interdiffusion of silicon and aluminum.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile