The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1990
Filed:
Aug. 04, 1987
Applicant:
Inventors:
Yasushiro Nishioka, New Haven, CT (US);
Hiroshi Shinriki, Tokyo, JP;
Noriyuki Sakuma, Tokyo, JP;
Kiichiro Mukai, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 54 ; 357 236 ; 437919 ;
Abstract
A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta.sub.2 O.sub.5, and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.