The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1990
Filed:
Jun. 08, 1988
Applicant:
Inventor:
Mitsumasa Koyanagi, Higashimurayama, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 34 ; 437 40 ; 437 41 ; 437 44 ; 437 57 ; 357 239 ; 357 42 ;
Abstract
A process for fabricating a semiconductor device having n-channel and p-channel MOSFET's. Each MOSFET has a pair of side walls that are simultaneously formed on both sides of the gate electrode. The n-channel MOSFET has source and drain regions consisting of a low-concentration region formed by implanting ions using the gate electrode as a mask, and a high-concentration region formed by implanting ions using the gate electrode and side walls as masks. The p-channel MOSFET has source and drain regions consisting of high-concentration regions formed by implanting ions using the gate electrode and side walls as masks.